Low resistivity thin film refractory silicides grown in ultrahigh vacuum at low temperaturePANTEL, R; CAMPIDELLI, Y; D'AVITAYA, F. A et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 10, pp 2426-2430, issn 0013-4651Article

X-ray study of UHV-CVD filling of porous silicon by GeBUTTARD, D; DOLINO, G; CAMPIDELLI, Y et al.Journal of crystal growth. 1998, Vol 183, Num 3, pp 294-304, issn 0022-0248Article

Thermally induced modifications in the porous silicon propertiesHALIMAOUI, A; CAMPIDELLI, Y; LARRE, A et al.Physica status solidi. B. Basic research. 1995, Vol 190, Num 1, pp 35-40, issn 0370-1972Conference Paper

The Ir/Si/ErSi₂ tunable infrared photoemission sensorSAGNES, I; CAMPIDELLI, Y; BADOZ, P. A et al.Journal of electronic materials. 1994, Vol 23, Num 6, pp 497-501, issn 0361-5235Article

Electron irradiation effect on antimony doping of silicon <111> grown by molecular-beam epitaxyDELAGE, S; CAMPIDELLI, Y; ARNAUD D'AVITAYA, F et al.Journal of applied physics. 1987, Vol 61, Num 4, pp 1404-1409, issn 0021-8979Article

Ultra-thin strained SOI substrate analysis by pseudo-MOS measurementsGALLON, C; FENOUILLET -BERANGER, C; ERNST, T et al.Microelectronic engineering. 2005, Vol 80, pp 241-244, issn 0167-9317, 4 p.Conference Paper

Growth kinetics and physical characterisation of Si_1-xGe_xO₂ films obtained by plasma assisted oxidationBUSANI, T; PLANTIER, H; DEVINE, R. A. B et al.Journal of non-crystalline solids. 1999, Vol 254, pp 80-88, issn 0022-3093Conference Paper

Tunable infrared photoemission sensor on Si using epitaxial ErSi₂/Si heterostructuresSAGNES, I; CAMPIDELLI, Y; VINCENT, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 312-316, issn 0921-5107Conference Paper

Epitaxial growth of Si On Er-implanted si substratesMOUTONNET, D; L'HARIDON, H; FAVENNEC, P. N et al.Materials letters (General ed.). 1990, Vol 9, Num 2-3, pp 57-59, issn 0167-577XArticle

Structural properties of relaxed Ge buffer layers on Si(001): effect of layer thickness and low temperature Si initial bufferMYRBERG, T; JACOB, A. P; NUR, O et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 7, pp 411-417, issn 0957-4522, 7 p.Article

Resonant tunneling in Si-SiGe superlattices on relaxed buffer substratesTSUJINO, S; MENTESE, S; BENSAHEL, D et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 377-381, issn 0169-4332, 5 p.Conference Paper

Luminescence of silicon thin film and SiGe multiple quantum wells realized on SOICALVO, V; SOTTA, D; ULMER, H et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 107-110, issn 0925-3467Conference Paper

Single wafer epitaxy of Si and SiGe using UHV-CVDGLOWACKI, F; CAMPIDELLI, Y.Microelectronic engineering. 1994, Vol 25, Num 2-4, pp 161-170, issn 0167-9317Conference Paper

Transistor effect in monolithic Si/CoSi₂/Si epitaxial structuresROSENCHER, E; DELAGE, S; CAMPIDELLI, Y et al.Electronics Letters. 1984, Vol 20, Num 19, pp 762-764, issn 0013-5194Article

Thin-film devices for low power applicationsMONFRAY, S; FENOUILLET-BERANGER, C; DESTEFANIS, V et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 90-96, issn 0038-1101, 7 p.Article

Low-temperature RPCVD of Si, SiGe alloy, and Si_1―yC_y films on Si substrates using trisilane (Silcore^®)GOUYE, A; KERMARREC, O; HALIMAOUI, A et al.Journal of crystal growth. 2009, Vol 311, Num 13, pp 3522-3527, issn 0022-0248, 6 p.Article

Ge islands and photonic crystals for Si-based photonicsBOUCAUD, P; LI, X; LOURTIOZ, J.-M et al.Optical materials (Amsterdam). 2005, Vol 27, Num 5, pp 792-798, issn 0925-3467, 7 p.Conference Paper

High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methodsMEDUNA, M; NOVAK, J; BENSAHEL, D et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 10A, pp A121-A125, issn 0022-3727Conference Paper

Strain characterization of strained silicon on insulator wafersPAILLARD, V; GHYSELEN, B; POCAS, S et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 367-373, issn 0167-9317, 7 p.Conference Paper

Infrared spectroscopy in p-type SiGe/Si quantum wellsBERROIR, J. M; ZANIER, S; GULDNER, Y et al.Applied surface science. 1996, Vol 102, pp 331-335, issn 0169-4332Conference Paper

Selective growth of tensily strained Si_1-yC_y films on patterned Si substratesGOUYE, A; HILE, F; HALIMAOUI, A et al.Materials science in semiconductor processing. 2009, Vol 12, Num 1-2, pp 34-39, issn 1369-8001, 6 p.Conference Paper

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocationsBOGUMILOWICZ, Y; HARTMANN, J. M; TRUCHE, R et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 127-134, issn 0268-1242, 8 p.Article

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injectionCHRIQUI, Y; LARGEAU, L; PATRIARCHE, G et al.Journal of crystal growth. 2004, Vol 265, Num 1-2, pp 53-59, issn 0022-0248, 7 p.Article

Single-wafer processing of in situ-doped polycrystalline Si and Si_1-xGe_x : European technologyBENSAHEL, D; CAMPIDELLI, Y; HERNANDEZ, C et al.Solid state technology. 1998, Vol 41, Num 3, pp S5-S10, issn 0038-111X, 4 p.Article

Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitorsGAMEZ-CUATZIN, H; DAAMI, A; GARCHERY, L et al.Microelectronic engineering. 1998, Vol 43-44, pp 669-676, issn 0167-9317Conference Paper